IGCT Integrated Gate Commutated Thyristors are a type of power semiconductor switching device developed for medium voltage inverters and used in giant power electronic complete sets (Integrated Gate Commutated Thyristors=Gate Commutated Thyristors+Gate Units). Proposed by ABB in 1997. IGCT has made significant progress in power, reliability, switching speed, efficiency, cost, weight, and volume of converter devices, bringing a new leap to power electronic complete sets of devices. IGCT integrates GTO chips with anti parallel diodes and gate drive circuits, and then connects them with their gate drivers in a low inductance manner on the periphery. It combines the stable turn-off ability of transistors and the advantages of low on state losses of thyristors, exerting the performance of thyristors during the conduction phase and presenting transistor characteristics during the turn-off phase. IGCT has the characteristics of high current, high blocking voltage, high switching frequency, high reliability, compact structure, low conduction loss, and low manufacturing cost, high yield, and has good application prospects.
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